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          首頁 >STW15NB50FI>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          STW15NB50FI

          N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

          DESCRIPTION Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

          文件:110.22 Kbytes 頁數(shù):9 Pages

          STMICROELECTRONICS

          意法半導體

          W15NB50

          N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

          DESCRIPTION Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

          文件:110.22 Kbytes 頁數(shù):9 Pages

          STMICROELECTRONICS

          意法半導體

          H15NB50FI

          N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET

          DESCRIPTION Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

          文件:110.37 Kbytes 頁數(shù):3 Pages

          STMICROELECTRONICS

          意法半導體

          STH15NB50

          N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET

          DESCRIPTION Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

          文件:110.37 Kbytes 頁數(shù):3 Pages

          STMICROELECTRONICS

          意法半導體

          STH15NB50

          N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

          DESCRIPTION Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

          文件:110.22 Kbytes 頁數(shù):9 Pages

          STMICROELECTRONICS

          意法半導體

          詳細參數(shù)

          • 型號:

            STW15NB50FI

          • 制造商:

            STMICROELECTRONICS

          • 制造商全稱:

            STMicroelectronics

          • 功能描述:

            N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

          供應商型號品牌批號封裝庫存備注價格
          ST
          22+
          TO-247
          6000
          十年配單,只做原裝
          詢價
          ST/意法半導體
          22+
          TO-247
          25000
          只做原裝進口現(xiàn)貨,專注配單
          詢價
          ST/意法
          22+
          TO-247
          94502
          詢價
          ST
          25+
          TO-247
          37650
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          SST
          原廠封裝
          9800
          原裝進口公司現(xiàn)貨假一賠百
          詢價
          ST/意法
          23+
          TO-247
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          ST/意法
          24+
          TO-247
          60000
          全新原裝現(xiàn)貨
          詢價
          ST/意法
          23+
          TO-247
          11200
          原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
          詢價
          ST
          17+
          TO-247
          6200
          詢價
          ST
          24+
          TO-247-3
          3408
          詢價
          更多STW15NB50FI供應商 更新時間2026-1-19 14:03:00
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