N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh? Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件：499.91 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.35 廓 typ., 12 A MDmesh??II Power MOSFET in a TO-220FP ultra narrow leads package

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件：807.56 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

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N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh? Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件：499.91 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh? Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件：499.91 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體