| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STW15NA50 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 14.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：351.71 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
STW15NA50 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( 文件：243.26 Kbytes 頁數(shù)：11 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( 文件：243.26 Kbytes 頁數(shù)：11 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( 文件：243.26 Kbytes 頁數(shù)：11 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 9.3A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：343.87 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( 文件：243.26 Kbytes 頁數(shù)：11 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號：
STW15NA50
- 功能描述：
MOSFET TO-247 N-CH 500V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
17+ |
TO-247 |
31518 |
原裝正品 可含稅交易 |
詢價(jià) | ||
ST |
05+ |
TO-247 |
2380 |
原裝進(jìn)口 |
詢價(jià) | ||
24+ |
2150 |
詢價(jià) | |||||
ST |
16+ |
TO-3P |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
ST |
新 |
14130 |
全新原裝 貨期兩周 |
詢價(jià) | |||
ST |
25+23+ |
TO-3P |
29849 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
ST |
18+ |
TO-247 |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
ST |
18+ |
TO-247 |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
ST |
24+ |
TO-3P |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價(jià) | ||
ST |
2447 |
TO-3P |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) |
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