N-channel 1000 V, 6.25 廓, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH??Power MOSFET

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure a h

文件：459.31 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

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N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：196.64 Kbytes 頁數(shù)：9 Pages

SAMHOP

三合微科

N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package

文件：826.92 Kbytes 頁數(shù)：8 Pages

SAMHOP

三合微科

N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：825.99 Kbytes 頁數(shù)：9 Pages

SAMHOP

三合微科

N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：765.38 Kbytes 頁數(shù)：8 Pages

SAMHOP

三合微科

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：722.92 Kbytes 頁數(shù)：7 Pages

SAMHOP

三合微科

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：853.97 Kbytes 頁數(shù)：8 Pages

SAMHOP

三合微科

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：814.74 Kbytes 頁數(shù)：8 Pages

SAMHOP

三合微科

Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

文件：177.73 Kbytes 頁數(shù)：11 Pages

SAMHOP

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Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

文件：201.43 Kbytes 頁數(shù)：11 Pages

SAMHOP

三合微科