Waterproof Small Type Tactile Switch

文件：143.2 Kbytes 頁(yè)數(shù)：2 Pages

MITSUMI

三美

Ultraminiature toggle switches, IP67

文件：498.8 Kbytes 頁(yè)數(shù)：4 Pages

APEX-ELECTRONICS

N-channel 30V - 0.0045OHM - 80A - DPAK - IPAK Planar STripFET TM II Power MOSFET

Description This Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical alignment steps

文件：434.62 Kbytes 頁(yè)數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

P-Channel E nhancement Mode MOSFET

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：876.33 Kbytes 頁(yè)數(shù)：8 Pages

SAMHOP

三合微科

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.47 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D?PAK

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：1.63832 Mbytes 頁(yè)數(shù)：24 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION The Max220TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count

文件：73.38 Kbytes 頁(yè)數(shù)：5 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N - CHANNEL 800V - 0.65ohm - 10A - Max220 PowerMESHO MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per

文件：44.76 Kbytes 頁(yè)數(shù)：5 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH??II MOSFET

DESCRIPTION The third generation of MESH OVERLAY? Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件：409.39 Kbytes 頁(yè)數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH??II MOSFET

DESCRIPTION The third generation of MESH OVERLAY? Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件：409.39 Kbytes 頁(yè)數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體