絲?。?a target="_blank" title="Marking" href="/4n80k5/marking.html">4N80K5；Package：IPAK；N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.30035 Mbytes 頁(yè)數(shù)：23 Pages

STMICROELECTRONICS

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N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：791.2 Kbytes 頁(yè)數(shù)：9 Pages

SAMHOP

三合微科

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.4A@ TC=25℃ ·Drain Source Voltage -VDSS=525V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.45 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3? Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH? technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

文件：1.18185 Mbytes 頁(yè)數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3? Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH? technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

文件：1.19927 Mbytes 頁(yè)數(shù)：23 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.38 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.16 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3? Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH? technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

文件：1.1786 Mbytes 頁(yè)數(shù)：19 Pages

STMICROELECTRONICS

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N-channel 650 V, 1.15 typ., 4 A MDmeshTM M6 Power MOSFET in an IPAK package

Features ? Reduced switching losses ? Lower RDS(on) x area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description The new MDmesh? M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：688.44 Kbytes 頁(yè)數(shù)：12 Pages

STMICROELECTRONICS

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N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3

Description These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low on resistance, superior dynamic performance and high avalanche capability, render

文件：1.41415 Mbytes 頁(yè)數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體