| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package. 文件：799.26 Kbytes 頁(yè)數(shù)：8 Pages | SAMHOP 三合微科 | SAMHOP | ||
Dual N-Channel Enhancement Mode Field E ffect Trans is tor STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N 文件：152.7 Kbytes 頁(yè)數(shù)：8 Pages | SAMHOP 三合微科 | SAMHOP | ||
Dual N-Channel 20 V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC 文件：521.21 Kbytes 頁(yè)數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFET??II POWER MOSFET DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps 文件：413.11 Kbytes 頁(yè)數(shù)：10 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N - CHANNEL 60V - 0.065ohm - 3A SO-8 STripFET POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema 文件：71.39 Kbytes 頁(yè)數(shù)：5 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N - CHANNEL 30V - 0.055ohm - 3.5A - SO-8 PowerMESH MOSFET DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka 文件：70.79 Kbytes 頁(yè)數(shù)：5 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
DUAL P-CHANNEL 20V - 0.090 ohm - 3A SO-8 STripFET??POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab 文件：259.07 Kbytes 頁(yè)數(shù)：8 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
DUAL P - CHANNEL 30V - 0.145ohm - 3A SO-8 STripFETO POWER MOSFET DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark 文件：72.72 Kbytes 頁(yè)數(shù)：5 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
P - CHANNEL 30V - 0.065ohm - 3A - S0-8 STripFETO MOSFET PLUS SCHOTTKY RECTIFIER DESCRIPTION: This product associates the latest low voltage StripFET? in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. 文件：70.35 Kbytes 頁(yè)數(shù)：5 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
P - CHANNEL 30V - 0.13ohm - 3A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER DESCRIPTION: This product associates the latest low voltage StripFET? in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. 文件：72.5 Kbytes 頁(yè)數(shù)：5 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
低頻或音頻放大 （LF）_功率開(kāi)關(guān) （PSW）
- 封裝形式：
直插封裝
- 極限工作電壓：
80V
- 最大電流允許值：
15A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
2
- 可代換的型號(hào)：
3DK109C,
- 最大耗散功率：
125W
- 放大倍數(shù)：
β=20-50
- 圖片代號(hào)：
E-44
- vtest：
80
- htest：
999900
- atest：
15
- wtest：
125
產(chǎn)品屬性
- 產(chǎn)品編號(hào)：
STS
- 制造商：
3M
- 類(lèi)別：
電纜，電線 - 管理 > 標(biāo)記物
- 系列：
STS
- 包裝：
盒
- 類(lèi)型：
導(dǎo)線標(biāo)記
- 尺寸：
0.75" 寬 x 1.40" 長(zhǎng)（19.1mm x 35.6mm）
- 電纜直徑：
0.090" ~ 0.315"（2.29mm ~ 8.00mm）
- 圖例：
空白
- 顏色：
白色
- 材料：
乙烯基
- 描述：
WIRE MARKER 19.1MM X 35.6MM WHT
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
AMCC |
25+ |
BGA |
2317 |
品牌專(zhuān)業(yè)分銷(xiāo)商,可以零售 |
詢(xún)價(jià) | ||
ST |
10+ |
SOP-8 |
7800 |
全新原裝正品,現(xiàn)貨銷(xiāo)售 |
詢(xún)價(jià) | ||
原裝ST |
20+ |
SOP8 |
2960 |
誠(chéng)信交易大量庫(kù)存現(xiàn)貨 |
詢(xún)價(jià) | ||
ST |
08+ |
SOP-8 |
2500 |
原裝正品現(xiàn)貨,可開(kāi)發(fā)票,假一賠十 |
詢(xún)價(jià) | ||
SSOUSA |
1638+ |
SOP16 |
5652 |
代理品牌 |
詢(xún)價(jià) | ||
ST |
24+ |
SOP-8 |
10000 |
詢(xún)價(jià) | |||
ST/意法半導(dǎo)體 |
25+ |
SO-8 |
10000 |
原裝公司現(xiàn)貨 |
詢(xún)價(jià) | ||
ST/意法半導(dǎo)體 |
24+ |
8-SOIC |
6000 |
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成 |
詢(xún)價(jià) | ||
ST |
24+ |
三極smd |
4900 |
本站現(xiàn)庫(kù)存 |
詢(xún)價(jià) | ||
ST |
08+ |
SOP8 |
2500 |
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢(xún) |
詢(xún)價(jià) |
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