Radar Target Simulator, Level Reading

FEATURES Single Sideband Output Simulated Target Speed and Size Adjustable Simulated Target Moving Direction Switchable Instrumentation Grade APPLICATIONS Doppler Target Simulations Radar Systems Testing

文件：275.21 Kbytes 頁(yè)數(shù)：2 Pages

ERAVANT

DIP8 package, connecting one side (pin5 to pin8) with a power MOSFET drain.

General Descriptions The STR2A100 series are power ICs for switching power supplies, incorporating a power MOSFET and a current mode PWM controller IC in one package. Including a startup circuit and a standby function in the controller, the product achieves low power consumption, low standby po

文件：357.66 Kbytes 頁(yè)數(shù)：18 Pages

SANKEN

三墾

DIP8 package, connecting one side (pin5 to pin8) with a power MOSFET drain.

General Descriptions The STR2A100 series are power ICs for switching power supplies, incorporating a power MOSFET and a current mode PWM controller IC in one package. Including a startup circuit and a standby function in the controller, the product achieves low power consumption, low standby po

文件：357.66 Kbytes 頁(yè)數(shù)：18 Pages

SANKEN

三墾

DIP8 package, connecting one side (pin5 to pin8) with a power MOSFET drain.

General Descriptions The STR2A100 series are power ICs for switching power supplies, incorporating a power MOSFET and a current mode PWM controller IC in one package. Including a startup circuit and a standby function in the controller, the product achieves low power consumption, low standby po

文件：357.66 Kbytes 頁(yè)數(shù)：18 Pages

SANKEN

三墾

DIP8 package, connecting one side (pin5 to pin8) with a power MOSFET drain.

General Descriptions The STR2A100 series are power ICs for switching power supplies, incorporating a power MOSFET and a current mode PWM controller IC in one package. Including a startup circuit and a standby function in the controller, the product achieves low power consumption, low standby po

文件：357.66 Kbytes 頁(yè)數(shù)：18 Pages

SANKEN

三墾

STR2-nano microstepping motor drive

■■ Compact Size for Mounting ■■ Current range 0.3A to 2.2A/Phase ■■ Step & Direction or CW/CCW Pulse control ■■ Automatic idle current reduction ■■ Built-in self test move profile ■■ DIP switch setup - no software required ■■ Electronic damping (anti-resonance) ■■ Microstepping & Microstep

文件：690.54 Kbytes 頁(yè)數(shù)：2 Pages

MCLENNAN

絲?。?a target="_blank" title="Marking" href="/2k3l/marking.html">2K3L；Package：SOT-23；Very low on-resistance

Description This device is a P-channel Power MOSFET developed using the STripFET? H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness

文件：547.07 Kbytes 頁(yè)數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

P-Channel Enhancement Mode Power MOSFET

General Description The u ses advanc ed tren ch technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. STR2P3LLH6 Features VDS -30V ID (at VGS=-10V) -5.0A RDS(ON)

文件：755.98 Kbytes 頁(yè)數(shù)：6 Pages

LEIDITECH

雷卯電子

Surface Mount Low VF Schottky Barrier Rectifier

Features ? Low power loss, high efficiency ? High surge current capability ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard

文件：327.29 Kbytes 頁(yè)數(shù)：5 Pages

PANJIT

強(qiáng)茂

絲?。?a target="_blank" title="Marking" href="/str30100cb/marking.html">STR30100CB；Package：TO-263；Surface Mount Low VF Schottky Barrier Rectifier

Features ? Low power loss, high efficiency ? High surge current capability ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard

文件：327.29 Kbytes 頁(yè)數(shù)：5 Pages

PANJIT

強(qiáng)茂