P-Channel Enhancement Mode Power MOSFET

General Description The u ses advanc ed tren ch technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. STR2P3LLH6 Features VDS -30V ID (at VGS=-10V) -5.0A RDS(ON)

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LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/2k3l/marking.html">2K3L；Package：SOT-23；Very low on-resistance

Description This device is a P-channel Power MOSFET developed using the STripFET? H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness

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STMICROELECTRONICS

意法半導(dǎo)體

P溝道30 V、0.048 Ohm典型值、2 A STripFET H6功率MOSFET，SOT-23封裝

This device is a P-channel Power MOSFET developed using the STripFET? H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. ? Very low on-resistance \n? Very low gate charge \n? High avalanche ruggedness \n? Low gate drive power loss;

ST

意法半導(dǎo)體

LFBGA144

ST

上傳：海芯未來(lái)半導(dǎo)體電子（深圳）有限公司

QFP-144

ST

上傳：深圳市百納智芯科技有限公司