| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STP7N65M2 | 絲?。?a target="_blank" title="Marking" href="/7n65m2/marking.html">7N65M2；Package：TO-220；N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages Description These devices are N-channel Power MOSFETs developed using the MDmesh? M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most dem 文件：881.75 Kbytes 頁(yè)數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
STP7N65M2 | N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a TO-220 package These devices are N-channel Power MOSFETs developed using the MDmesh? M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high eff ? Extremely low gate charge\n? Excellent output capacitance (Coss) profile? 100% avalanche tested\n? Zener-protected; | ST 意法半導(dǎo)體 | ST | |
N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages Description These devices are N-channel Power MOSFETs developed using the MDmesh? M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most dem 文件：881.75 Kbytes 頁(yè)數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-Channel MOSFET uses advanced trench technology 文件：2.091489 Mbytes 頁(yè)數(shù)：7 Pages | DOINGTER 杜因特 | DOINGTER | ||
Extremely low gate charge Description This device is an N-channel Power MOSFET developed using the MDmesh? M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demand 文件：1.06499 Mbytes 頁(yè)數(shù)：17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 1.15Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：318.04 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC |
技術(shù)參數(shù)
- Package：
TO-220AB
- Grade：
Industrial
- VDSS(V)：
650
- RDS(on)_max(@ VGS=10V)(Ω)：
1.15
- Drain Current (Dc)_max(A)：
5
- PTOT_max(W)：
60
- Qg_typ(nC)：
9
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
STM |
19+ |
2950 |
TO-220-3 |
詢(xún)價(jià) | |||
ST/意法 |
2025+ |
TO-220-3 |
2950 |
原裝進(jìn)口價(jià)格優(yōu) 請(qǐng)找坤融電子! |
詢(xún)價(jià) | ||
STMicroelectronics |
25+ |
N/A |
7786 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢(xún)價(jià) | ||
ST/意法 |
25+ |
TO220 |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢(xún)價(jià) | ||
ST(意法半導(dǎo)體) |
2447 |
TO-220 |
105000 |
50個(gè)/管一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期 |
詢(xún)價(jià) | ||
STM |
25+ |
TO-220 |
3675 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢(xún)價(jià) | ||
22+ |
NA |
985 |
加我QQ或微信咨詢(xún)更多詳細(xì)信息, |
詢(xún)價(jià) | |||
ST/意法 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
ST/意法 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
ST/意法 |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢(xún)價(jià) |
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