Extremely low gate charge

Description This device is an N-channel Power MOSFET developed using the MDmesh? M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demand

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STMICROELECTRONICS

意法半導(dǎo)體

N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

N溝道650 V、0.98 Ohm典型值、5 A MDmesh M2功率MOSFET，DPAK封裝

This device is an N-channel Power MOSFET developed using the MDmesh? M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high effici ? Extremely low gate charge \n? Excellent output capacitance (Coss) profile \n? 100% avalanche tested \n? Zener-protected;

ST

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 1.15Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

Extremely low gate charge

Description This device is an N-channel Power MOSFET developed using the MDmesh? M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demand

文件：904.79 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using the MDmesh? M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most dem

文件：881.75 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體