N溝道60 V、0.015 Ohm、50 A STripFET(TM) II功率MOSFET，TO-220封裝

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and c ? 100% avalanche tested \n? Exceptional dv/dt capability;

ST

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N溝道60 V、0.015 Ohm、50 A STripFET(TM) II功率MOSFET，TO-220FP封裝

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and c ? 100% avalanche tested \n? Exceptional dv/dt capability;

ST

意法半導(dǎo)體

N溝道60 V、0.014 Ohm典型值、35 A STripFET II功率MOSFET，TO-220封裝

This Power MOSFET is the latest development of STMicroelectronis unique \\\"Single Feature Size?\\\" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manu ? Exceptional dv/dt capability \n? Application oriented characterization \n? 100% avalanche tested;

ST

意法半導(dǎo)體