| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 28A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：319.02 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less 文件：57.07 Kbytes 頁數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/p55nf06/marking.html">P55NF06；Package：TO-220；N-channel 60 V, 0.015 Ω, 50 A STripFET? II Power MOSFET in D2PAK, TO-220 and TO-220FP packages Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter 文件：797.49 Kbytes 頁數(shù)：19 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 30V - 0.01 ohm - 55A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a 文件：338.93 Kbytes 頁數(shù)：8 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a 文件：338.93 Kbytes 頁數(shù)：11 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：371.88 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：371.9 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D?PAK STripFET??II POWER MOSFET Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters fo 文件：485.18 Kbytes 頁數(shù)：12 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：P55NF06FP；Package：TO-220；N-channel 60 V, 0.015 Ω, 50 A STripFET? II Power MOSFET in D2PAK, TO-220 and TO-220FP packages Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter 文件：797.49 Kbytes 頁數(shù)：19 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D?PAK STripFET??II POWER MOSFET Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters fo 文件：485.18 Kbytes 頁數(shù)：12 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- Package：
TO-220FP
- Grade：
Industrial
- VDSS(V)：
60
- RDS(on)_max(@ VGS=10V)(Ω)：
0.018
- Drain Current (Dc)_max(A)：
50
- PTOT_max(W)：
30
- Qg_typ(nC)：
44.5
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST/意法半導(dǎo)體 |
22+ |
TO-220FP-3 |
6006 |
原裝正品現(xiàn)貨 可開增值稅發(fā)票 |
詢價 | ||
ST專家 |
2021+ |
TO-220FP |
6800 |
原廠原裝,歡迎咨詢 |
詢價 | ||
ST |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
STMicroelectronics |
25+ |
N/A |
11543 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
ST |
24+ |
TO-220-3 |
1239 |
詢價 | |||
ST/進口原 |
17+ |
TO-220F |
6200 |
詢價 | |||
STM |
24+/25+ |
TO-220FP |
2000 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||
ST |
24+ |
TO-220F |
4000 |
原裝現(xiàn)貨熱賣 |
詢價 | ||
ST |
24+ |
TO220 |
605 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
STMicroelectronics |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應(yīng) |
詢價 |
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