isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 6.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.95 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

文件：106.66 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導體

Power MOSFET

文件：2.12073 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

文件：106.66 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導體

Power MOSFET

文件：1.28953 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

POWER MOSFET

GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as po

文件：163.18 Kbytes 頁數(shù)：4 Pages

SUNTAC