N-Channel 650 V (D-S) MOSFET

文件：1.08793 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel MOSFET uses advanced trench technology

文件：1.7999 Mbytes 頁(yè)數(shù)：5 Pages

DOINGTER

杜因特

F-CellTM系列高壓MOSFET

SVF2N60M(MJ)(NF)(F)(D) N溝道增強(qiáng)型高壓功率MOS場(chǎng)效應(yīng)晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術(shù)制造。先進(jìn)的工藝及元胞結(jié)構(gòu)使得該產(chǎn)品具有較低的導(dǎo)通電阻、優(yōu)越的開關(guān)性能及很高的雪崩擊穿耐量。\n\n 該產(chǎn)品可廣泛應(yīng)用于AC-DC開關(guān)電源，DC-DC電源轉(zhuǎn)換器，高壓H橋PWM馬達(dá)驅(qū)動(dòng)。 ? 2A，600V，RDS(on)(典型值)=3.7Ω@VGS=10V\n? 低柵極電荷量\n? 低反向傳輸電容\n? 開關(guān)速度快\n? 提升了dv/dt 能力;

Silan

士蘭微

This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN.

文件：510.09 Kbytes 頁(yè)數(shù)：6 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

N-channel MOSFET (TO-220F , TO-220)

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：752.89 Kbytes 頁(yè)數(shù)：7 Pages

SEMIPOWER

芯派科技

N-channel MOSFET (TO-251 , TO-252)

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：724.69 Kbytes 頁(yè)數(shù)：7 Pages

SEMIPOWER

芯派科技