| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STH8NA80 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( 文件：45.09 Kbytes 頁(yè)數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( 文件：45.09 Kbytes 頁(yè)數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：343.69 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggednessand superior switching performance. ■ TYPICAL RDs(0 文件：134.21 Kbytes 頁(yè)數(shù)：3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggednessand superior switching performance. ■ TYPICAL RDs(0 文件：134.21 Kbytes 頁(yè)數(shù)：3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | NJS | NJS |
詳細(xì)參數(shù)
- 型號(hào)：
STH8NA80
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
TO |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
ST |
25+ |
TO |
12300 |
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
ST |
24+ |
TO-3PF-3 |
8866 |
詢價(jià) | |||
ST |
06+ |
TO-247 |
2000 |
原裝 |
詢價(jià) | ||
ST |
24+ |
原廠封裝 |
4000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ST |
16+ |
TO-3P |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
ST |
24+ |
TO-3P |
6430 |
原裝現(xiàn)貨/歡迎來(lái)電咨詢 |
詢價(jià) | ||
ST/意法 |
24+ |
65230 |
詢價(jià) | ||||
ST/意法 |
23+ |
TO-3P |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | ||
ST |
25+ |
SOT-93 |
2987 |
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電! |
詢價(jià) |
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