isc N-Channel MOSFET Transistor

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ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES · Drain Current –ID= 2.6A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive · DC-DC converter · Power switch · Solenoid drive

文件：319.06 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 100V 2.0A 216 @ VGS=10V 328 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -100V -1.3A 547 @ VGS=-10V 614 @ VGS=-4.5V

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SAMHOP

三合微科

Soldering Tools and Equipment for Electronics Assembly

文件：5.60083 Mbytes 頁(yè)數(shù)：64 Pages

METCAL

HIGH EFFICIENCY ULTRAFAST DIODE

Description The STTH102, which is using ST’s new 200 V planar technology, is specially suited for switching mode base drive and transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. Features and benefits ■ Ver

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STMICROELECTRONICS

意法半導(dǎo)體