650 V、6 A溝槽柵場截止低損耗M系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthe ? Maximum junction temperature: TJ = 175 °C \n? 6 μs of minimum short-circuit withstand time \n? VCE(sat) = 1.55 V (typ.) @ IC = 6 A \n? Tight parameter distribution \n? Safer paralleling \n? Positive VCE(sat) temperature coefficient \n? Low thermal resistance \n? Soft and very fast-recovery antipar;

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Trench gate field-stop IGBT, M series 650 V, 6 A low loss

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STMICROELECTRONICS

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Trench gate field-stop IGBT, M series 650 V, 6 A low loss

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STMICROELECTRONICS

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Trench gate field-stop IGBT, M series 650 V, 6 A low loss

文件：958.64 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體