溝槽柵場截止IGBT，M系列，650 V、6 A，低損耗

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, ? 6 μs of short-circuit withstand time \n? VCE(sat) = 1.55 V (typ.) @ IC = 6 A \n? Tight parameter distribution \n? Safer paralleling \n? Low thermal resistance \n? Soft and very fast recovery antiparallel diode;

ST

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g6m65df2/marking.html">G6M65DF2；Package：TO-220FP；Trench gate field-stop IGBT, M series 650 V, 6 A low loss

文件：985.24 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Package：TO-220-3 整包；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT TRENCH 650V 12A TO220FP

STMICROELECTRONICS

意法半導(dǎo)體

Trench gate field-stop IGBT, M series 650 V, 6 A low loss

文件：958.64 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體