650 V、4 A溝槽柵場截止低損耗M系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, ? 6 μs of short-circuit withstand time \n? VCE(sat) = 1.6 V (typ.) @ IC = 4 A \n? Tight parameter distribution \n? Safer paralleling \n? Low thermal resistance \n? Soft and very fast recovery antiparallel diode;

ST

意法半導(dǎo)體

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：1.16759 Mbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is e

文件：448.18 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：1.09091 Mbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：983.16 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體