Galvanically isolated 4 A single gate driver for SiC MOSFETs

Features ? High voltage rail up to 1200 V ? Driver current capability: 4 A sink/source @25°C ? dV/dt transient immunity ±100 V/ns in full temperature range ? Overall input-output propagation delay: 75 ns ? Separate sink and source option for easy gate driving configuration ? 4 A Miller CLAMP

文件：716.81 Kbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

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Galvanically isolated 4 A single gate driver for SiC MOSFETs

Features ? High voltage rail up to 1200 V ? Driver current capability: 4 A sink/source @25°C ? dV/dt transient immunity ±100 V/ns in full temperature range ? Overall input-output propagation delay: 75 ns ? Separate sink and source option for easy gate driving configuration ? 4 A Miller CLAMP

文件：716.81 Kbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導體

Galvanically isolated 4 A single gate driver for SiC MOSFETs

The STGAP2SICS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.\n\n The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power appli ? High voltage rail up to 1200 V \n? Driver current capability: 4 A sink/source @25°C \n? dV/dt transient immunity ±100 V/ns in full temperature range \n? Overall input-output propagation delay: 75 ns \n? Separate sink and source option for easy gate driving configuration \n? 4 A Miller CLAMP dedica;

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意法半導體

Galvanically isolated 4 A single gate driver for SiC MOSFETs

The STGAP2SICSAN is a single gate driver which provides isolation between the gate driving channel and the low voltage control and interface circuitry.\n\n The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications ? AEC-Q100 qualified \n? High voltage rail up to 1700 V \n? Driver current capability: 4 A sink/source @25°C \n? 100 V/ns Common Mode Transient Immunity (CMTI) \n? Overall input-output propagation delay: 45 ns \n? Rail-to-rail outputs \n? 4 A Miller CLAMP dedicated pin \n? UVLO function? Gate drivin;

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Galvanically isolated 4 A single gate driver for SiC MOSFETs

STGAP2SICSN是在柵極驅動通道與低壓控制和接口電路之間提供6 kV電隔離的單柵極驅動器。\n\n 該柵極驅動器具有4 A能力和軌到軌輸出，使得該器件還適合工業(yè)應用中的功率轉換、電機驅動逆變器等高功率應用。該設備有兩種不同的配置。具有獨立輸出引腳的配置可以使用柵極電阻獨立優(yōu)化導通和關斷。具有單輸出引腳和米勒鉗位功能的配置可防止半橋拓撲中快速換向期間的柵極峰值。兩種配置均可為外部組件提供高度靈活性和減少外部材料清單。\n\n 該器件集成了保護功能：UVLO（其值已針對SiC MOSFET進行了優(yōu)化）和熱關斷，便于設計高度可靠的系統(tǒng)。雙輸入引腳允許選擇信號極性控制和實現(xiàn)HW聯(lián)鎖保護，以避免在 ? 高壓導軌達1700 V \n? 驅動器電流能力：4 A灌/拉@25 °C \n? dV/dt瞬態(tài)抗擾性 ±100 V/ns（整個溫度范圍） \n? 總輸入 - 輸出傳播延遲：75 ns \n? 獨立的電流拉灌選項，輕松實現(xiàn)柵極驅動配置 \n? 4A專用密勒鉗位引腳 \n? UVLO功能? 柵極驅動電壓高達26 V \n? 具有遲滯的3.3 V，5 V TTL / CMOS輸入 \n? 溫度關閉保護 \n? 待機功能 \n? 4.8 kVPK隔離 \n? 窄體SO-8;

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