N-channel 650 V, 0.425 廓 typ., 11 A MDmesh??I Power MOSFET in DPAK, TO-220FP, I?PAKFP and TO-220 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit

文件：1.26375 Mbytes 頁數(shù)：21 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit

文件：1.26375 Mbytes 頁數(shù)：21 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in

文件：322.55 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET

Description The MDmesh? associates the multiple drain process with the company’s PowerMesh? horizontal layout assuring an outstanding low on resistance. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar

文件：582.11 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/f11nm80/marking.html">F11NM80；Package：TO-220FP；N-channel 800 V, 0.35 Ω, 11 A MDmesh? Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247

Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh? technology, which associates th

文件：908.99 Kbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

文件：310.71 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

絲?。?a target="_blank" title="Marking" href="/110n10f7/marking.html">110N10F7；Package：TO-220FP；N-channel 100 V, 5.1 m廓 typ., 110 A, STripFET??VII DeepGATE?? Power MOSFETs in TO-220FP and TO-220 packages

文件：1.23098 Mbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

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Low gate input resistance

文件：991.8 Kbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package

文件：713.99 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel MOSFET uses advanced trench technology

文件：1.30875 Mbytes 頁數(shù)：5 Pages

DOINGTER

杜因特