isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) -RDS(on) = 0.51Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.09 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

Description These devices are N-channel Power MOSFETs made using the SuperMESH3? technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH? technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superio

文件：1.16073 Mbytes 頁(yè)數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.550 typ., 7.5 A MDmesh? M2 EP Power MOSFET in a TO-220FP package

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? Very low turn-off switching losses ? 100 avalanche tested ? Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh? M2 enhanced performance (EP) technology. Thanks to

文件：305.39 Kbytes 頁(yè)數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件：1.2819 Mbytes 頁(yè)數(shù)：25 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件：1.2819 Mbytes 頁(yè)數(shù)：25 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 500 V, 0.4, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220

Description These devices are made using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

文件：675.27 Kbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description This series of devices is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件：641.21 Kbytes 頁(yè)數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description This series of devices is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件：470.38 Kbytes 頁(yè)數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件：489.4 Kbytes 頁(yè)數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description The device is an N-channel FDmesh? II Power MOSFET that belongs to the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi

文件：530.46 Kbytes 頁(yè)數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體