Zener-protected

Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH? 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for app

文件：1.00919 Mbytes 頁數(shù)：21 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

文件：335.38 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N溝道800 V、0.95 Ohm典型值、6 A MDmesh K5功率MOSFET，DPAK封裝

這款超高壓N-溝道功率MOSFET采用MDmesh? K5技術(shù)進(jìn)行設(shè)計。該技術(shù)以創(chuàng)新的專有垂直結(jié)構(gòu)為基礎(chǔ)。因此，在要求高功率密度和高效率的應(yīng)用中，導(dǎo)通電阻顯著降低，并具有極低的柵極電荷。 ? 業(yè)界先進(jìn)的低RDS(on) x 面積 \n? 業(yè)界出色的品質(zhì)因數(shù) (FoM) \n? 超低的柵極電荷 \n? 經(jīng)過100%雪崩測試 \n? 穩(wěn)壓保護(hù);

ST

意法半導(dǎo)體

Ultra low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：689.13 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 1.2Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.31 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Ultra low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：689.13 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體