isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.95Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.05 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Extremely low gate charge

文件：1.20522 Mbytes 頁數(shù)：21 Pages

STMICROELECTRONICS

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N溝道600 V、0.86 Ohm典型值、5 A MDmesh M2功率MOSFET，DPAK封裝

These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. ? Extremely low gate charge \n? Excellent output capacitance (COSS) profile \n? 100% avalanche tested \n? Zener-protected;

ST

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Low gate input resistance

文件：865.37 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.95Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.45 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Extremely low gate charge

文件：310.76 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體