| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-channel 60V - 0.014ohm - 60A - DPAK Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a 文件：413.77 Kbytes 頁數：13 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
N-channel 60V - 0.014ohm - 60A - DPAK Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a 文件：413.77 Kbytes 頁數：13 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
N-CHANNEL 30V - 0.0075ohm - 60A DPAK STripFET??II POWER MOSFET Description This application specific Power MOSFET is the third genaration of STMicroelectronics unique “Single Feature Size?” strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives 文件：452.83 Kbytes 頁數：9 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
N-CHANNEL 55V - 0.012ohm - 60A DPAK STripFET??II POWER MOSFET Description This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable 文件：455.75 Kbytes 頁數：9 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size?” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remark 文件：324.34 Kbytes 頁數：14 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size?” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remark 文件：324.34 Kbytes 頁數：14 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
N-Channel 60-V (D-S) MOSFET Features ? Vos =60V.lo =50A Ros 文件：2.13544 Mbytes 頁數：5 Pages | TECHPUBLIC 臺舟電子 | TECHPUBLIC | ||
STD 文件：67.81 Kbytes 頁數：1 Pages | VCC | VCC | ||
N-Channel 30-V (D-S) MOSFET 文件：996.87 Kbytes 頁數：7 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
N-Channel 30-V (D-S) MOSFET 文件：996.79 Kbytes 頁數：7 Pages | VBSEMI 微碧半導體 | VBSEMI |
技術參數
- ITVM(A)：
60
- IT@TC(°C)：
85
- VDRM/VRRM(V)：
800
- ITSM 45°C/10ms(A)：
1500
- VTO(V)：
0.85
- rT(mΩ)：
3.7
- dv/dt(V/μs)：
1000
- TVJM(°C)：
125
- RthJC per chip(K/W)：
0.45
- 封裝外形：
Fig. 36
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
DISCRETE |
2500 |
STM |
52500 |
詢價 | |||
ST |
05+ |
原廠原裝 |
30051 |
只做全新原裝真實現貨供應 |
詢價 | ||
ST |
25+ |
TO-252 |
4670 |
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可 |
詢價 | ||
ST |
17+ |
TO-252 |
6200 |
100%原裝正品現貨 |
詢價 | ||
ST |
24+ |
原廠原封 |
6523 |
進口原裝公司百分百現貨可出樣品 |
詢價 | ||
ST |
24+ |
TO-252 |
29825 |
詢價 | |||
ST |
2016+ |
TO252 |
6000 |
公司只做原裝,假一罰十,可開17%增值稅發(fā)票! |
詢價 | ||
ST |
12+ |
TO-252 |
15000 |
全新原裝,絕對正品,公司現貨供應。 |
詢價 | ||
ST |
24+/25+ |
5000 |
原裝正品現貨庫存價優(yōu) |
詢價 | |||
ST |
24+ |
TO-251(3直引線 |
240 |
原裝現貨假一罰十 |
詢價 |
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