N-CHANNEL 60V - 0.014ohm - 60A DPAK STripFET??II POWER MOSFET

Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

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STMICROELECTRONICS

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N-channel 60V - 0.014ohm - 60A - DPAK

Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

文件：413.77 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

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N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

N-CHANNEL 60 V - 0.014 OHM - 60 A DPAK STripFET II MOSFET

This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is Exceptional dv/dt capability\n100% avalanche tested\nApplication oriented characterization;

ST

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N-channel 60V - 0.014ohm - 60A - DPAK

Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

文件：413.77 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 60V - 0.014ohm - 60A - DPAK STripFET II Power MOSFET

文件：413.77 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

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N-Channel 60 V (D-S) MOSFET

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VBSEMI

微碧半導(dǎo)體

N溝道60 V、0.014 Ohm典型值、60 A STripFET II功率MOSFET，DPAK封裝

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET? process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom a ? Exceptional dv/dt capability \n? 100% avalanche tested \n? Low gate charge;

ST

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