| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STD4NK60Z | N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH??ower MOSFET Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH? technology, achieved through optimization of STs well established strip-based PowerMESH? layout. In addition to a significant reduction in on resistance, this device is designed to 文件：759 Kbytes 頁數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
STD4NK60Z | N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser 文件：578.96 Kbytes 頁數(shù)：20 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
STD4NK60Z | N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser 文件：970.81 Kbytes 頁數(shù)：28 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH??ower MOSFET Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH? technology, achieved through optimization of STs well established strip-based PowerMESH? layout. In addition to a significant reduction in on resistance, this device is designed to 文件：759 Kbytes 頁數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser 文件：578.96 Kbytes 頁數(shù)：20 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：D4NK60Z；Package：IPAK；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH? Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure 文件：731.33 Kbytes 頁數(shù)：32 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser 文件：970.81 Kbytes 頁數(shù)：28 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel MOSFET Transistor ? FEATURES ? Drain Source Voltage- : VDSS= 600V(Min) ? Static drain-source on-resistance : RDS(on) ≤ 2?@VGS=10V ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications 文件：299.74 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser 文件：970.81 Kbytes 頁數(shù)：28 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/d4nk60z/marking.html">D4NK60Z；Package：DPAK；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH? Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure 文件：731.33 Kbytes 頁數(shù)：32 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- Package：
IPAK
- Grade：
Industrial
- VDSS(V)：
600
- RDS(on)_max(@ VGS=10V)(Ω)：
2
- Drain Current (Dc)_max(A)：
4
- PTOT_max(W)：
70
- Qg_typ(nC)：
18.8
- Reverse Recovery Time_typ(ns)：
400
- Peak Reverse Current_nom(A)：
8.5
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO252 |
6996 |
只做原裝正品現(xiàn)貨 |
詢價 | ||
ST |
25+ |
TO252 |
40 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
ST |
21+ |
TO252 |
10000 |
全新進(jìn)口原裝現(xiàn)貨QQ:505546343手機(jī)13032182425曹小姐 |
詢價 | ||
ST |
18+ |
TO-252 |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
ST |
25+ |
TO-252 |
30000 |
代理全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
ST |
25+ |
TO-252/D-PAK |
32500 |
普通 |
詢價 | ||
ST |
2447 |
SOT252 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
ST(意法) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進(jìn)口正品做服務(wù)做口碑有支持 |
詢價 | ||
ST |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST/意法 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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