絲?。?a target="_blank" title="Marking" href="/4ln80k5/marking.html">4LN80K5；Package：DPAK；N-channel 800 V, 2.1 Ω typ., 3 A MDmesh? K5 Power MOSFET in a DPAK package

Features ? Industry’s lowest RDS(on) x area ? Industry’s best figure of merit (FoM) ? Ultra low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technolog

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N溝道800 V、2.1 Ohm典型值、3 A MDmesh K5功率MOSFET，DPAK封裝

這款超高壓N-溝道功率MOSFETs 采用MDmesh? K5技術進行設計。該技術以創(chuàng)新專有的垂直工藝為基礎。因此，在要求高功率密度和高效率的應用中，導通電阻顯著降低，并具有極低的柵極電荷。 ? 業(yè)界領先的低 RDS(on) x 面積 \n? 業(yè)界出色的品質因數(shù)（FoM） \n? 極低的柵極電荷 \n? 經(jīng)過100％雪崩測試 \n? 穩(wěn)壓保護;

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N-channel 800 V, 2.1 Ω typ., 3 A MDmesh? K5 Power MOSFET in a TO-220FP package

Features ? Industry’s lowest RDS(on) * area ? Industry’s best FoM (figure of merit) ? Ultra low-gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technolog

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N-channel 800 V, 2.1 廓 typ., 3 A MDmesh??K5 Power MOSFET in a PowerFLAT??5x6 VHV package

文件：682 Kbytes 頁數(shù)：14 Pages

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N-channel 800 V, 2.1 Ω typ.,3 A MDmesh? K5 Power MOSFET in a TO-220 package

Features ? Industry’s lowest RDS(on) * area ? Industry’s best figure of merit (FoM) ? Ultra low-gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technolog

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