絲?。?a target="_blank" title="Marking" href="/4ln80k5/marking.html">4LN80K5；Package：TO-220FP；N-channel 800 V, 2.1 Ω typ., 3 A MDmesh? K5 Power MOSFET in a TO-220FP package

Features ? Industry’s lowest RDS(on) * area ? Industry’s best FoM (figure of merit) ? Ultra low-gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technolog

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N溝道800 V、2.1 Ohm典型值、3 A MDmesh K5功率MOSFET，TO-220FP封裝

This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. ? Industry’s lowest RDS(on) * area \n? Industry’s best FoM (figure of merit) \n? Ultra low-gate charge \n? 100% avalanche tested \n? Zener-protected;

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N-channel 800 V, 2.1 廓 typ., 3 A MDmesh??K5 Power MOSFET in a PowerFLAT??5x6 VHV package

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N-channel 800 V, 2.1 Ω typ.,3 A MDmesh? K5 Power MOSFET in a TO-220 package

Features ? Industry’s lowest RDS(on) * area ? Industry’s best figure of merit (FoM) ? Ultra low-gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technolog

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