N溝道800 V、2.75 Ohm典型值、2 A MDmesh K5功率MOSFET，DPAK封裝

這款超高壓N-溝道功率MOSFET 采用MDmesh? K5技術(shù)進(jìn)行設(shè)計(jì)。該技術(shù)以創(chuàng)新專有的垂直工藝為基礎(chǔ)。因此，在要求高功率密度和高效率的應(yīng)用中，導(dǎo)通電阻顯著降低，并具有極低的柵極電荷。 ? 業(yè)界領(lǐng)先的低RDS(on) x 面積 \n? 業(yè)界出色的品質(zhì)因數(shù)（FoM） \n? 極低的柵極電荷 \n? 經(jīng)過100％雪崩測試 \n? 穩(wěn)壓保護(hù);

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絲?。?a target="_blank" title="Marking" href="/3ln80k5/marking.html">3LN80K5；Package：DPAK；N-channel 800 V, 2.75 廓 typ., 2 A MDmesh??K5 Power MOSFET in a DPAK package

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N-channel 800 V, 2.75 Ω typ., 2 A MDmesh? K5 Power MOSFET in a TO-220FP package

Features ? Industry’s lowest RDS(on) x area ? Industry’s best FoM (figure of merit) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technolog

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N-channel 800 V, 2.75 Ω typ., 2 A MDmesh? K5 Power MOSFET in TO-220 and IPAK packages

Features ? Industry’s lowest RDS(on) x area ? Industry’s best FoM (figure of merit) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh? K5 technol

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N-channel 800 V, 2.75 Ω typ., 2 A MDmesh? K5 Power MOSFET in TO-220 and IPAK packages

Features ? Industry’s lowest RDS(on) x area ? Industry’s best FoM (figure of merit) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh? K5 technol

文件：804.67 Kbytes 頁數(shù)：15 Pages

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