絲?。?a target="_blank" title="Marking" href="/3ln80k5/marking.html">3LN80K5；Package：TO-220FP；N-channel 800 V, 2.75 Ω typ., 2 A MDmesh? K5 Power MOSFET in a TO-220FP package

Features ? Industry’s lowest RDS(on) x area ? Industry’s best FoM (figure of merit) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technolog

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N溝道800 V、2.75 Ohm典型值、2 A MDmesh K5功率MOSFET，TO-220FP封裝

This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. ? Industry’s lowest RDS(on) x area \n? Industry’s best FoM (figure of merit) \n? Ultra-low gate charge \n? 100% avalanche tested \n? Zener-protected;

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N-channel 800 V, 2.75 Ω typ., 2 A MDmesh? K5 Power MOSFET in TO-220 and IPAK packages

Features ? Industry’s lowest RDS(on) x area ? Industry’s best FoM (figure of merit) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh? K5 technol

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STMICROELECTRONICS

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N-channel 800 V, 2.75 Ω typ., 2 A MDmesh? K5 Power MOSFET in TO-220 and IPAK packages

Features ? Industry’s lowest RDS(on) x area ? Industry’s best FoM (figure of merit) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh? K5 technol

文件：804.67 Kbytes 頁(yè)數(shù)：15 Pages

STMICROELECTRONICS

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