N-CHANNEL 60V - 0.020 ohm - 28A IPAK/DPAK STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

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STMICROELECTRONICS

意法半導(dǎo)體

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD30NF06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

文件：1.18926 Mbytes 頁數(shù)：6 Pages

UMW

友臺半導(dǎo)體

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD30NF06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technolo

文件：1.12765 Mbytes 頁數(shù)：6 Pages

EVVOSEMI

翊歐

N溝道60V - 0.020 Ohm - 28A - DPAK StripFET(TM) II功率MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique \\\"Single Feature SizeTM\\\" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable man ? TYPICAL RDS(on) = 0.020Ω \n? 100% AVALANCHE TESTED \n? EXCEPTIONAL dv/dt CAPABILITY \n? SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4\\\") \n? THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1\\\");

ST

意法半導(dǎo)體

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD30NF06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technolo

文件：1.12765 Mbytes 頁數(shù)：6 Pages

EVVOSEMI

翊歐

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD30NF06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

文件：1.18926 Mbytes 頁數(shù)：6 Pages

UMW

友臺半導(dǎo)體

N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET??POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件：461.99 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A STripFET? II Power MOSFET in a DPAK package

Features ? AEC-Q101 qualified ? Low threshold drive ? Gate charge minimized Description This Power MOSFET series realized with STMicroelectronics unique STripFET? process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in

文件：721.03 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET??POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件：461.99 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 60 V (D-S) MOSFET

文件：963.83 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體