N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET??POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

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STMICROELECTRONICS

意法半導(dǎo)體

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD30NF06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

文件：1.18926 Mbytes 頁(yè)數(shù)：6 Pages

UMW

友臺(tái)半導(dǎo)體

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD30NF06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technolo

文件：1.12765 Mbytes 頁(yè)數(shù)：6 Pages

EVVOSEMI

翊歐

Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A STripFET? II Power MOSFET in a DPAK package

Features ? AEC-Q101 qualified ? Low threshold drive ? Gate charge minimized Description This Power MOSFET series realized with STMicroelectronics unique STripFET? process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in

文件：721.03 Kbytes 頁(yè)數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET??POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件：461.99 Kbytes 頁(yè)數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 60 V (D-S) MOSFET

文件：963.83 Kbytes 頁(yè)數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel 60-V (D-S) MOSFET

文件：898.97 Kbytes 頁(yè)數(shù)：6 Pages

VBSEMI

微碧半導(dǎo)體

汽車(chē)級(jí)N溝道60 V、22 mOhm典型值、35 A STripFET II功率MOSFET，DPAK封裝

This Power MOSFET series realized with STMicroelectronics unique STripFET? process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also ? AEC-Q101 qualified \n? Low threshold drive \n? Gate charge minimized;

ST

意法半導(dǎo)體

N-channel 60 V, 0.022 Ohm typ., 35 A STripFET II Power MOSFET in a DPAK package

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu ? Low threshold drive \n? Gate charge minimized;

ST

意法半導(dǎo)體

Package：TO-252-3，DPak（2 引線(xiàn) + 接片），SC-63；包裝：卷帶（TR） 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個(gè) 描述：MOSFET N-CH 60V 28A DPAK

STMICROELECTRONICS

意法半導(dǎo)體