N-channel 600 V, 4typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages

文件：1.0714 Mbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 650 V (D-S) MOSFET

文件：1.088 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N溝道600 V、4 Ohm典型值、2 A SuperMESH3(TM) 功率MOSFET，DPAK封裝

These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab ? 100% avalanche tested \n? Extremely high dv/dt capability \n? Very low intrinsic capacitance \n? Improved diode reverse recovery characteristics \n? Zener-protected;

ST

意法半導(dǎo)體

N-channel 600 V, 4typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages

文件：1.0714 Mbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.13 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel 600 V, 4 廓 typ., 0.6 A MDmesh??K3 Power MOSFET in a TO-92 package

文件：613.1 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體