N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET??POWER MOSFET

DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer app

文件：437.02 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET? POWER MOSFET

ST

意法半導(dǎo)體

N-CHANNEL 100V - 0.030 ohm - 25A DPAK LOW GATE CHARGE STripFET??II POWER MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and

文件：451.74 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：329.77 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel 100 V, 0.030 廓, 25 A DPAK STripFET??II Power MOSFET

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for

文件：656.37 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel Enhancement Mode Power MOSFET

Features VDS= 100V, ID= 40 A RDS(ON)

文件：858.34 Kbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

N-channel 100V - 0.030Ohm - 25A - DPAK Low gate charge STripFET II Power MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and

文件：432.72 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 100-V (D-S) MOSFET

文件：984.89 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel 100-V (D-S) MOSFET

文件：984.82 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

N溝道100 V - 0.030 Ohm - 25 A - DPAK StripFET(TM) II功率MOSFET

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu ? 出色的dv/dt性能 \n? 經(jīng)過100％雪崩測試 \n? 邏輯電平器件;

ST

意法半導(dǎo)體