isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

無(wú)錫固電

N-channel 100 V, 0.030 廓, 25 A DPAK STripFET??II Power MOSFET

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for

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STMICROELECTRONICS

意法半導(dǎo)體

N-channel Enhancement Mode Power MOSFET

Features VDS= 100V, ID= 40 A RDS(ON)

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BYCHIP

百域芯

N-Channel 100-V (D-S) MOSFET

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VBSEMI

微碧半導(dǎo)體

N溝道100 V - 0.030 Ohm - 25 A - DPAK StripFET(TM) II功率MOSFET

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu ? 出色的dv/dt性能 \n? 經(jīng)過(guò)100％雪崩測(cè)試 \n? 邏輯電平器件;

ST

意法半導(dǎo)體