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          首頁(yè) >STD20NF06>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          STD20NF06

          N-CHANNEL 60V - 0.032OHM - 24A DPAK STripFET TM II POWER MOSFET

          文件:342.91 Kbytes 頁(yè)數(shù):13 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          STD20NF06

          N-Channel MOSFET uses advanced trench technology

          文件:2.38019 Mbytes 頁(yè)數(shù):5 Pages

          DOINGTER

          杜因特

          STD20NF06L

          60V N-Channel Enhancement ModePowerMOSFET

          General Description The STD20NF06L uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha rge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),25mΩ(Typ) @ VGS =10V RDS(ON),30mΩ(Typ) @ VGS =4.5V Advanced Trench Technolo

          文件:1.1867 Mbytes 頁(yè)數(shù):6 Pages

          UMW

          友臺(tái)半導(dǎo)體

          STD20NF06L

          60V N-Channel Enhancement Mode Power MOSFET

          General Description The STD20NF06L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),25mΩ(Typ) @ VGS =10V RDS(ON),30mΩ(Typ) @ VGS =4.5V Advanced Trench Technol

          文件:1.15232 Mbytes 頁(yè)數(shù):6 Pages

          EVVOSEMI

          翊歐

          STD20NF06L

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:330.57 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          STD20NF06L

          N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET

          Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size?” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

          文件:416.49 Kbytes 頁(yè)數(shù):14 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          STD20NF06L-1

          N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET

          Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size?” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

          文件:416.49 Kbytes 頁(yè)數(shù):14 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          STD20NF06LAG

          絲?。?a target="_blank" title="Marking" href="/d20nf06l/marking.html">D20NF06L;Package:DPAK;Automotive-grade N-channel 60 V, 32 mΩ typ., 24 A, STripFET II Power MOSFET in a DPAK package

          Features ? AEC-Q101 qualified ? Exceptional dv/dt capability ? 100 avalanche tested ? Low gate charge Applications ? Switching applications Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize in

          文件:605.19 Kbytes 頁(yè)數(shù):15 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          STD20NF06LT4

          N-channel 60V - 0.032廓 - 24A - DPAK - IPAK STripFET??II Power MOSFET

          Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size?” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

          文件:420.52 Kbytes 頁(yè)數(shù):14 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          STD20NF06L-1

          N-Channel 60 V (D-S) MOSFET

          文件:963.83 Kbytes 頁(yè)數(shù):7 Pages

          VBSEMI

          微碧半導(dǎo)體

          技術(shù)參數(shù)

          • Package:

            DPAK

          • Grade:

            Automotive

          • VDSS(V):

            60

          • RDS(on)_max(@ VGS=10V)(Ω):

            0.04

          • Drain Current (Dc)_max(A):

            24

          • PTOT_max(W):

            60

          • Qg_typ(nC):

            12

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          ST
          24+
          TO252DPAK
          8866
          詢價(jià)
          ST
          2015+
          TO252D
          12500
          全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
          詢價(jià)
          ST
          25+
          TO-252
          90000
          一級(jí)代理商進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理
          詢價(jià)
          ST
          20+
          TO-252
          36900
          原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
          詢價(jià)
          ST
          25+
          TO-252/D-PAK
          32500
          普通
          詢價(jià)
          ST(意法)
          23+
          NA
          20094
          正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
          詢價(jià)
          ST
          23+
          TO-252
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          ST/意法
          23+
          TO-252
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          ST/意法
          22+
          TO-252
          6300
          只做原裝,假一罰百,長(zhǎng)期供貨。
          詢價(jià)
          ST/意法
          2022+
          TO-252
          5000
          原廠代理 終端免費(fèi)提供樣品
          詢價(jià)
          更多STD20NF06供應(yīng)商 更新時(shí)間2026-1-18 15:30:00
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