N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D?PAK, DPAK, TO-220FP, I?PAK and TO-220 packages

Description These devices are N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件：1.31186 Mbytes 頁(yè)數(shù)：26 Pages

STMICROELECTRONICS

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N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D?PAK, DPAK, TO-220FP, I?PAK and TO-220 packages

Description These devices are N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件：1.31186 Mbytes 頁(yè)數(shù)：26 Pages

STMICROELECTRONICS

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絲印：DPAK；Package：TO-252；isc N-Channel Mosfet Transistor

文件：308.18 Kbytes 頁(yè)數(shù)：2 Pages

ISC

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Automotive-grade N-channel 500 V, 0.285 typ., 12 A MDmeshTM II Power MOSFET in a DPAK package

Features ? AEC-Q101 qualified ? 100 avalanche tested ? Low input capacitance and gate charge ? Low gate input resistance Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical

文件：645.05 Kbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

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Automotive-grade N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a DPAK package

This device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most ? Designed for automotive applications and AEC-Q101 qualified\n? 100% avalanche tested? Low input capacitance and gate charge\n? Low gate input resistance;

ST

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汽車級(jí)N溝道500 V、0.28 Ohm典型值、12 A MDmesh II功率MOSFET，DPAK封裝

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most d ? AEC-Q101 qualified \n? 100% avalanche tested \n? Low input capacitance and gate charge \n? Low gate input resistance;

ST

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