Automotive-grade N-channel 500 V, 0.285 typ., 12 A MDmeshTM II Power MOSFET in a DPAK package

Features ? AEC-Q101 qualified ? 100 avalanche tested ? Low input capacitance and gate charge ? Low gate input resistance Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical

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STMICROELECTRONICS

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汽車級N溝道500 V、0.28 Ohm典型值、12 A MDmesh II功率MOSFET，DPAK封裝

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most d ? AEC-Q101 qualified \n? 100% avalanche tested \n? Low input capacitance and gate charge \n? Low gate input resistance;

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N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D?PAK, DPAK, TO-220FP, I?PAK and TO-220 packages

Description These devices are N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

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isc N-Channel Mosfet Transistor

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isc N-Channel Mosfet Transistor

? FEATURES ? Drain Current ID= 12A@ TC=25℃ ? Drain Source Voltage- : VDSS= 500V(Min) ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

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