Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：1.16058 Mbytes 頁(yè)數(shù)：24 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.28 廓 typ., 11 A MDmesh??II Power MOSFET in TO-220FP, I?PAK, TO-220, IPAK, TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：989.75 Kbytes 頁(yè)數(shù)：21 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

文件：300.57 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.55172 Mbytes 頁(yè)數(shù)：21 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel Mosfet Transistor

文件：323.25 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N溝道600 V、0.28 Ohm典型值、11 A MDmesh(TM) II功率MOSFET，DPAK封裝

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most ? 100% avalanche tested \n? Low input capacitance and gate charge \n? Low gate input resistance;

ST

意法半導(dǎo)體

N-channel 600 V, 325 mOhm typ., 11 A FDmesh II Power MOSFET in a DPAK package

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. ? Fast-recovery body diode \n? Low gate charge and input capacitance \n? Low on-resistance RDS(on) \n? 100% avalanche tested \n? High dv/dt ruggedness;

ST

意法半導(dǎo)體