N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

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STMICROELECTRONICS

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N-channel 60V - 0.08廓 - 12A - DPAK - IPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：333.86 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

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N-channel 60 V, 0.08廓, 12 A, DPAK, IPAK STripFET??II Power MOSFET

文件：341.77 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

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N-channel 60V - 0.08廓 - 12A - DPAK - IPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：333.86 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：444.44 Kbytes 頁數(shù)：10 Pages

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N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.09Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

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絲印：D12NF06L；Package：DPAK；N-channel 60 V, 70 mΩ typ., 12 A, StripFET? II Power MOSFET in a DPAK package

Features Exceptional dv/dt capability 100 avalanche tested Low gate charge Applications Switching applications Description This Power MOSFET series has been developed using STMicroelectronics' unique STripFET? process, which is specifically designed to minimize input capacitance and g

文件：555.56 Kbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

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Automotive-grade N-channel 60 V, 0.07 Ω typ., 12 A, StripFET? II Power MOSFET in a DPAK package

Features ? Designed for automotive applications and AEC-Q101 qualified ? Exceptional dv/dt capability ? Low gate charge Applications ? Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designe

文件：848.89 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

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Automotive-grade N-channel 60 V, 0.07 Ω typ., 12 A, StripFET? II Power MOSFET in a DPAK package

Features ? Designed for automotive applications and AEC-Q101 qualified ? Exceptional dv/dt capability ? Low gate charge Applications ? Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designe

文件：848.89 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 60 V, 70 mΩ typ., 12 A, StripFET? II Power MOSFET in a DPAK package

Features Exceptional dv/dt capability 100 avalanche tested Low gate charge Applications Switching applications Description This Power MOSFET series has been developed using STMicroelectronics' unique STripFET? process, which is specifically designed to minimize input capacitance and g

文件：555.56 Kbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體