絲?。?a target="_blank" title="Marking" href="/d12nf06l/marking.html">D12NF06L；Package：DPAK；N-channel 60 V, 70 mΩ typ., 12 A, StripFET? II Power MOSFET in a DPAK package

Features Exceptional dv/dt capability 100 avalanche tested Low gate charge Applications Switching applications Description This Power MOSFET series has been developed using STMicroelectronics' unique STripFET? process, which is specifically designed to minimize input capacitance and g

文件：555.56 Kbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

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Automotive-grade N-channel 60 V, 0.07 Ω typ., 12 A, StripFET? II Power MOSFET in a DPAK package

Features ? Designed for automotive applications and AEC-Q101 qualified ? Exceptional dv/dt capability ? Low gate charge Applications ? Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designe

文件：848.89 Kbytes 頁數(shù)：16 Pages

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N-Channel 60 V (D-S) MOSFET

文件：1.00669 Mbytes 頁數(shù)：8 Pages

VBSEMI

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N-Channel MOSFET uses advanced trench technology

文件：674.95 Kbytes 頁數(shù)：5 Pages

DOINGTER

杜因特

N-channel 60V - 0.08??- 12A - DPAK - IPAK STripFET??II Power MOSFET

文件：323.2 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

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N-channel 60 V, 70 mOhm typ., 12 A, StripFET II Power MOSFET in a DPAK package

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET? process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom a ? Exceptional dv/dt capability \n? 100% avalanche tested \n? Low gate charge;

ST

意法半導體

Automotive-grade N-channel 60 V, 0.07 Ω typ., 12 A, StripFET? II Power MOSFET in a DPAK package

Features ? Designed for automotive applications and AEC-Q101 qualified ? Exceptional dv/dt capability ? Low gate charge Applications ? Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designe

文件：848.89 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導體

N-channel 60 V, 70 mΩ typ., 12 A, StripFET? II Power MOSFET in a DPAK package

Features Exceptional dv/dt capability 100 avalanche tested Low gate charge Applications Switching applications Description This Power MOSFET series has been developed using STMicroelectronics' unique STripFET? process, which is specifically designed to minimize input capacitance and g

文件：555.56 Kbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導體