This axial leaded strap product is designed to provide reliable, non-cycling protection for rechanrgeable batteries

文件：128.85 Kbytes 頁數(shù)：2 Pages

LITTELFUSE

力特

N-channel Enhancement Mode Power MOSFET

Features VDS= 40V, ID= 80A RDS(ON)

文件：1.13583 Mbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

N-channel 40 V, 3.5 m廓 , 80 A, DPAK, D?PAK STripFET??VI DeepGATE??Power MOSFET

文件：998.25 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導體

N-Channel 4 -V (D-S) MOSFET

文件：1.00332 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導體

N-Channel MOSFET uses advanced trench technology

文件：1.32818 Mbytes 頁數(shù)：5 Pages

DOINGTER

杜因特

N-channel 40 V, 3.1 m廓, 80 A DPAK, D?PAK STripFET??VI DeepGATE??Power MOSFET

文件：897.83 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導體

This axial leaded strap product is designed to provide reliable, non-cycling protection for rechanrgeable batteries

文件：128.85 Kbytes 頁數(shù)：2 Pages

LITTELFUSE

力特

N溝道40 V、3.5 mOhm、80 A STripFET F6功率MOSFET，DPAK封裝

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET? DeepGATE? technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. ? Designed for automotive applications and AEC-Q101 qualified \n? Very low on-resistance \n? Very low gate charge \n? High avalanche ruggedness \n? Low gate drive power loss;

ST

意法半導體

N溝道40 V、3.1 mOhm、80 A STripFET(TM) VI DeepGATE(TM) 功率MOSFET，DPAK封裝

This product is a 40 V N-channel STripFET? VI Power MOSFET based on the ST’s proprietary STripFET? technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ? Logic level drive \n? 100% avalanche tested;

ST

意法半導體