N-channel Enhancement Mode Power MOSFET

Features VDS= 40V, ID= 80A RDS(ON)

文件：1.13583 Mbytes 頁(yè)數(shù)：4 Pages

BYCHIP

百域芯

N-channel 40 V, 3.5 m廓 , 80 A, DPAK, D?PAK STripFET??VI DeepGATE??Power MOSFET

文件：998.25 Kbytes 頁(yè)數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 4 -V (D-S) MOSFET

文件：1.00332 Mbytes 頁(yè)數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

N溝道40 V、3.5 mOhm、80 A STripFET F6功率MOSFET，DPAK封裝

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET? DeepGATE? technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. ? Designed for automotive applications and AEC-Q101 qualified \n? Very low on-resistance \n? Very low gate charge \n? High avalanche ruggedness \n? Low gate drive power loss;

ST

意法半導(dǎo)體