NPN Silicon Transistor

Description ? High current application Features ? Extremely low collector saturation voltage: VCE(sat)=0.1V(Typ.) @ IC=500mA, IB=50mA ? Suitable for low voltage large current drivers ? High DC current gain and large current capability ? Low on resistance : RON=0.6?(Max.) @ IB=1

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AUK

NPN Silicon Transistor

Description\n? High current application ? Extremely low collector saturation voltage: VCE(sat)=0.1V(Typ.) @ IC=500mA, IB=50mA\n? Suitable for low voltage large current drivers\n? High DC current gain and large current capability\n? Low on resistance : RON=0.6?(Max.) @ IB=1mA?;

ALD

TO-92 Plastic-Encapsulate Transistors

FEATURES Low Saturation Medium Current Application Extremely Low Collector Saturation Voltage Suitable for Low Voltage Large Current Drivers High DC Current Gain and Large Current Capability

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DGNJDZ

南晶電子

DOCSIS 3.0 and video front-end for gateway set-top box and cable modem

Features ■ Dual CPU architecture - one for DOCSIS? and one for host including eRouting and VoIP management ■ ARM Cortex-A9 770 MHz, dual-core CPU with NEON? SIMD co-processor ■ DOCSIS 3.0 data cable modem: – Up to 16 downstream channels (up to 800 Mbit/s) – Up to 4 upstream channels ■ Up

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STMICROELECTRONICS

意法半導(dǎo)體

Low spread of dynamic parameters

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STMICROELECTRONICS

意法半導(dǎo)體