HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

文件：78.52 Kbytes 頁數(shù)：8 Pages

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High voltage fast-switching NPN power transistor

文件：207.88 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

High voltage fast-switching NPN power transistor

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意法半導(dǎo)體

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

文件：78.52 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ MEDIUM VOLTAGE CAPABILITY ■ NPN TRANSISTORS ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

文件：272.2 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

High voltage fast-switching NPN power transistor

文件：207.88 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

High voltage fast-switching NPN power transistor

文件：207.88 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Package：TO-262-3，長引線，I2Pak，TO-262AA；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 400V 4A I2PAK

STMICROELECTRONICS

意法半導(dǎo)體