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    首頁 >SST29EE010A>規(guī)格書列表

    型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

    SST29EE010A-120-4I-WH

    1 Megabit (128K x 8) Page Mode EEPROM

    PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

    文件:256.329 Kbytes 頁數(shù):26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010A-150-4C-E

    1 Megabit (128K x 8) Page Mode EEPROM

    PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

    文件:256.329 Kbytes 頁數(shù):26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010A-150-4C-EH

    1 Megabit (128K x 8) Page Mode EEPROM

    PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

    文件:256.329 Kbytes 頁數(shù):26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010A-150-4C-N

    1 Megabit (128K x 8) Page Mode EEPROM

    PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

    文件:256.329 Kbytes 頁數(shù):26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010A-150-4C-NH

    1 Megabit (128K x 8) Page Mode EEPROM

    PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

    文件:256.329 Kbytes 頁數(shù):26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010A-150-4C-P

    1 Megabit (128K x 8) Page Mode EEPROM

    PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

    文件:256.329 Kbytes 頁數(shù):26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010A-150-4C-PH

    1 Megabit (128K x 8) Page Mode EEPROM

    PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

    文件:256.329 Kbytes 頁數(shù):26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010A-150-4C-U

    1 Megabit (128K x 8) Page Mode EEPROM

    PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

    文件:256.329 Kbytes 頁數(shù):26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010A-150-4C-UH

    1 Megabit (128K x 8) Page Mode EEPROM

    PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

    文件:256.329 Kbytes 頁數(shù):26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010A-150-4C-W

    1 Megabit (128K x 8) Page Mode EEPROM

    PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

    文件:256.329 Kbytes 頁數(shù):26 Pages

    SST

    Silicon Storage Technology, Inc

    詳細(xì)參數(shù)

    • 型號(hào):

      SST29EE010A

    • 制造商:

      SST

    • 制造商全稱:

      Silicon Storage Technology, Inc

    • 功能描述:

      1 Megabit(128K x 8) Page Mode EEPROM

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
    SST
    23+
    TSSOP-32
    11200
    原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
    詢價(jià)
    SST
    2024+
    TSSOP-32
    50000
    原裝現(xiàn)貨
    詢價(jià)
    SST
    23+
    DIP32
    8560
    受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
    詢價(jià)
    SST
    2015+
    SOP/DIP
    19889
    一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
    詢價(jià)
    24+
    50
    本站現(xiàn)庫存
    詢價(jià)
    (FLASH)
    23+
    PLCC
    5000
    原裝正品,假一罰十
    詢價(jià)
    SST
    25+
    PLCC
    5000
    百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
    詢價(jià)
    SST
    23+
    NA
    8000
    全新原裝假一賠十
    詢價(jià)
    SST
    22+
    PLCC
    2000
    原裝正品現(xiàn)貨
    詢價(jià)
    SST
    20+
    PLCC32
    11520
    特價(jià)全新原裝公司現(xiàn)貨
    詢價(jià)
    更多SST29EE010A供應(yīng)商 更新時(shí)間2026-1-23 9:30:00

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