首頁 >SST29EE010A>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SST29EE010A | 1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with 文件：256.329 Kbytes 頁數(shù)：26 Pages | SST Silicon Storage Technology, Inc | SST | |
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with 文件：256.329 Kbytes 頁數(shù)：26 Pages | SST Silicon Storage Technology, Inc | SST | ||
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with 文件：256.329 Kbytes 頁數(shù)：26 Pages | SST Silicon Storage Technology, Inc | SST | ||
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with 文件：256.329 Kbytes 頁數(shù)：26 Pages | SST Silicon Storage Technology, Inc | SST | ||
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with 文件：256.329 Kbytes 頁數(shù)：26 Pages | SST Silicon Storage Technology, Inc | SST | ||
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with 文件：256.329 Kbytes 頁數(shù)：26 Pages | SST Silicon Storage Technology, Inc | SST | ||
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with 文件：256.329 Kbytes 頁數(shù)：26 Pages | SST Silicon Storage Technology, Inc | SST | ||
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with 文件：256.329 Kbytes 頁數(shù)：26 Pages | SST Silicon Storage Technology, Inc | SST | ||
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with 文件：256.329 Kbytes 頁數(shù)：26 Pages | SST Silicon Storage Technology, Inc | SST | ||
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with 文件：256.329 Kbytes 頁數(shù)：26 Pages | SST Silicon Storage Technology, Inc | SST |
詳細參數(shù)
- 型號：
SST29EE010A
- 制造商：
SST
- 制造商全稱：
Silicon Storage Technology, Inc
- 功能描述：
1 Megabit(128K x 8) Page Mode EEPROM
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SST |
23+ |
TSSOP-32 |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
SST |
2024+ |
TSSOP-32 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
SST |
23+ |
DIP32 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
SST |
2015+ |
SOP/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
24+ |
50 |
本站現(xiàn)庫存 |
詢價 | ||||
(FLASH) |
23+ |
PLCC |
5000 |
原裝正品,假一罰十 |
詢價 | ||
SST |
25+ |
PLCC |
5000 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
SST |
23+ |
NA |
8000 |
全新原裝假一賠十 |
詢價 | ||
SST |
22+ |
PLCC |
2000 |
原裝正品現(xiàn)貨 |
詢價 | ||
SST |
20+ |
PLCC32 |
11520 |
特價全新原裝公司現(xiàn)貨 |
詢價 |
相關(guān)規(guī)格書
更多- SST29EE010A-120-4C-E
- SST29EE010A-120-4C-N
- SST29EE010A-90-4C-PH
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- SST29EE512-90-4C-NH
- SST29EE512-90-4C-UH
- SST29EE512-90-4I-EH
- SST29EE512-90-4I-PH
- SST29EE512-90-4I-WH
- SST29EF010-120-4I-NH
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- SST29EF010-150-4C-NH
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相關(guān)庫存
更多- SST29EE010A-120-4C-EH
- SST29EE010A-90-4C-P
- SST29EE010A-90-4C-U
- SST29EE010A-90-4C-W
- SST29EE010A-90-4I-E
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- SST29EE020-120-4C-PHE
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- SST29EE020-150-4C-U2
- SST29EE020-150-4I-NH
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- SST29EE512-150-4I-PH
- SST29EE512-150-4I-WH
- SST29EE512704CEHE
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- SST29EE512-70-4C-NHE
- SST29EE512704CPHE
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- SST29EF010-150-4I-PH
- SST29LE010-120-3C-E
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- SST29LE010-120-3C-U
- SST29LE010-120-3C-W
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