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    首頁 >SST29EE010>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    SST29EE010-250-4I-EH

    1 Mbit (128K x8) Page-Mode EEPROM

    PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

    文件:326.37 Kbytes 頁數:26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010-250-4I-NH

    1 Mbit (128K x8) Page-Mode EEPROM

    PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

    文件:326.37 Kbytes 頁數:26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010-250-4I-PH

    1 Mbit (128K x8) Page-Mode EEPROM

    PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

    文件:326.37 Kbytes 頁數:26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010-250-4I-UH

    1 Mbit (128K x8) Page-Mode EEPROM

    PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

    文件:326.37 Kbytes 頁數:26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010-250-4I-WH

    1 Mbit (128K x8) Page-Mode EEPROM

    PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

    文件:326.37 Kbytes 頁數:26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010-70-4C-EH

    1 Mbit (128K x8) Page-Mode EEPROM

    PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

    文件:326.37 Kbytes 頁數:26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010-70-4C-NH

    1 Mbit (128K x8) Page-Mode EEPROM

    PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

    文件:326.37 Kbytes 頁數:26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010-70-4C-PH

    1 Mbit (128K x8) Page-Mode EEPROM

    PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

    文件:326.37 Kbytes 頁數:26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010-70-4C-UH

    1 Mbit (128K x8) Page-Mode EEPROM

    PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

    文件:326.37 Kbytes 頁數:26 Pages

    SST

    Silicon Storage Technology, Inc

    SST29EE010-70-4C-WH

    1 Mbit (128K x8) Page-Mode EEPROM

    PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

    文件:326.37 Kbytes 頁數:26 Pages

    SST

    Silicon Storage Technology, Inc

    詳細參數

    • 型號:

      SST29EE010

    • 制造商:

      SST

    • 制造商全稱:

      Silicon Storage Technology, Inc

    • 功能描述:

      1 Megabit(128K x8) Page-Mode EEPROM

    供應商型號品牌批號封裝庫存備注價格
    SST
    2015+
    SOP/DIP
    19889
    一級代理原裝現貨,特價熱賣!
    詢價
    24+
    50
    本站現庫存
    詢價
    SST
    16+
    PLCC
    2500
    進口原裝現貨/價格優(yōu)勢!
    詢價
    (FLASH)
    23+
    PLCC
    5000
    原裝正品,假一罰十
    詢價
    SST
    22+
    PLCC
    2000
    原裝正品現貨
    詢價
    SST
    2447
    DIP
    100500
    一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨
    詢價
    25+
    PLCC32
    500000
    行業(yè)低價,代理渠道
    詢價
    SST
    22+
    DIP
    12245
    現貨,原廠原裝假一罰十!
    詢價
    SST
    PLCC
    68500
    一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
    詢價
    ST
    2024+
    PLCC
    50000
    原裝現貨
    詢價
    更多SST29EE010供應商 更新時間2026-1-22 16:50:00

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